s pd9103w 1 line s , b i - d irectional, low capacitance transient voltage suppressors descriptions the SPD9103W is a low capacitance tvs (tran sient voltage suppressor) array designed to protect high speed data interfaces . it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by electrostatic discharge ( esd ) , cable discharge events (cde), lightning and other induced voltage surges . the SPD9103W incorporates low ca pacitance steering diodes that reduce the typical capacitance to 1 pf per line. the SPD9103W may be used to provide esd protection up to 30 k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 2 0 a ( 8/20 s ) according to ie c61000 - 4 - 5. the SPD9103W is available in sod - 323 package. standard products are pb - free and halogen - free. features ? stand - off voltage: 3.3 v max. ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 30 k v ( contact discharge ) iec61000 - 4 - 4 ( e f t ): 40a - 5/50ns iec61000 - 4 - 5 (surge): 2 0 a (8/20s). ? low capacitance: c j = 1 pf typ. ? ultra - low leakage current: i r = 0. 1 na typ. ? l ow clamping voltage . ? solid - state silicon technology applications ? 10/100 ethernet ? stb ? router ? networking ? modem so d - 323 circuit d iagram w = device code * = month code ( a~z) marking (top view) order i nformation device package shipping SPD9103W - 2/tr sod - 323 3000 /tape&reel pin 1 pin 2 pin 1 pin 2 w * 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute m aximum r ating s electrical characteristics (t a = 25 o c, unless otherwise noted) * - 1) according to iec61000 - 4 - 5. parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 3 40 w peak pulse current (t p = 8/20 s) i pp 2 0 a esd according to iec61000 - 4 - 2 air discharge v esd 30 k v esd according to iec61000 - 4 - 2 contact discharge 30 operation junction temperature t j 1 25 o c lead temperature t l 260 o c storage temperat ure t stg - 55~150 o c parameter symbol condition min. typ. max. unit reverse maximum working voltage v rwm 3.3 v reverse leakage current i r v rwm = 3.3 v 0. 1 100 na reverse breakdown voltage v br i t = 1ma 4.0 v clamping voltage 1) v cl i pp = 1a, t p = 8/20s 8 v i pp = 5a, t p = 8/20s 10 v i pp = 2 0 a, t p = 8/20s 17 v junction capacitance c j v r = 0v, f = 1mhz i/o to i/o 3 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification s pd9103w
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